Impurity bands and band tailing in n-type GaAs
- 15 October 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (8), 2854-2859
- https://doi.org/10.1063/1.337069
Abstract
The density of states of the valence and conduction bands of n‐type GaAs has been calculated for a donor density of 1017 cm−3 at 300 and 20 K. Both the donor‐carrier and carrier‐carrier interactions have been included. Band tails appear on both bands and the energy gap is narrowed. Calculations were also performed for a donor density of 1015 cm−3 at 300 and 20 K. These results show the formation of an impurity band at 20 K, whereas a band tail exists at 300 K.Keywords
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