Low-temperature homoepitaxy on Si(111)
- 8 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (2), 204-206
- https://doi.org/10.1063/1.105966
Abstract
We have compared ion channeling results with molecular dynamics simulations to investigate low-temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400 °C; this is compared to ≊100 °C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.Keywords
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