Improved performance of silicon avalanche oscillators mounted on diamond heat sinks

1 January 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (9), 1617-1618
https://doi.org/10.1109/proc.1967.5915

Abstract

Silicon avalanche diodes have been mounted on diamond to achieve a continuous power density more than twice that achieved on copper. A pair of parallel connected wafers oa a single sample of diamond produced 4.7 watts of CW power at 13.3 GHz using a room temperature heat sink.

Keywords

SILICON
OSCILLATORS
HEAT SINKS
DIODES
COPPER
TEMPERATURE
WAFER BONDING
METALLIZATION
THERMAL RESISTANCE
THERMAL CONDUCTIVITY

Cited by 23 articles