Transient diffusion of low-concentration B in Si due to 29Si implantation damage
- 30 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (18), 1787-1789
- https://doi.org/10.1063/1.103100
Abstract
The effects of implantation damage on B diffusion are analyzed through the use of 29Si implants. Implant doses of 29Si ranging from 1×1012/cm2 to 1×1014/cm2 were used to create controlled amounts of damage. Temperatures ranging from 800 to 1000 °C were used to anneal the implant damage. For all anneal temperatures, the peak B concentration was well below the intrinsic electron concentration. Even for 29Si doses as low as 1×1012/cm2 significantly enhanced B diffusion was observed. The largest enhancement in B diffusion was observed for the highest 29Si implant dose and lowest anneal temperature. The kinetics of damage annealing determine the transient enhancement in the B profile. These results have important implications for the formation of shallow junctions using ion implantation.Keywords
This publication has 16 references indexed in Scilit:
- Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signalApplied Physics Letters, 1989
- Implantation damage and anomalous diffusion of implanted boron in siliconApplied Physics Letters, 1989
- Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantationApplied Physics A, 1989
- Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusionJournal of Applied Physics, 1987
- Implantation damage and the anomalous transient diffusion of ion-implanted boronApplied Physics Letters, 1987
- Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitialsJournal of Applied Physics, 1987
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconApplied Physics Letters, 1985
- Oxidation-enhanced diffusion of ion-implanted boron in silicon in extrinsic conditionsJournal of Applied Physics, 1985
- Erratum: Ionization mechanism in a nitrogen glow discharge [J. Appl. Phys. 5 4, 4951 (1983)]Journal of Applied Physics, 1985