ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STM
- 1 November 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 107, 184-188
- https://doi.org/10.1016/s0169-4332(96)00476-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Control of the Fermi-level position on the GaAs(001) surface: Se passivationJournal of Vacuum Science & Technology A, 1994
- ZnSe nucleation on the GaAs(001):Se-(2×1) surface observed by scanning tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- First-principles study of the atomic reconstructions of ZnSe(100) surfacesPhysical Review B, 1994
- Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopyPhysical Review B, 1994
- Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorptionPhysical Review B, 1992
- ZnSe/ZnMgSSe blue laser diodeElectronics Letters, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- Structure of the ZnSe/GaAs heteroepitaxial interfaceApplied Physics Letters, 1990
- Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)Physical Review B, 1989