Recombination, gain and bandwidth characteristics of 1.3-µm semiconductor laser amplifiers
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (1), 184-189
- https://doi.org/10.1109/jlt.1987.1075407
Abstract
The influence of the spontaneous recombination mechanism and the temperature- and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed. Measurements of signal gain are presented. Frequency detuning and optical bandwidth characteristics are discussed. By considering the trade-off between optical bandwidth and resonant signal gain, guidelines for the requirements to the facet reflectivity are given.Keywords
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