Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3
- 29 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13), 1783-1785
- https://doi.org/10.1063/1.119397
Abstract
We report on a thin-film channel waveguide electro-optic modulator fabricated in epitaxial on MgO. Films had an effective dc electro-optic coefficient of ∼50±5 pm/V and ∼18±2 pm/V at 5 MHz for λ∼1.55 μm light. Extinction ratios of 14 dB were obtained. The electro-optic effect decreases to ∼60% of the dc value at 1 Hz, 50% of the dc value at 20 kHz, and ∼37% of the dc value at 5 MHz.
Keywords
This publication has 7 references indexed in Scilit:
- Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgOApplied Physics Letters, 1996
- Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on siliconApplied Physics Letters, 1996
- Thin Film Epitaxial Oxide Optical WaveguidesMRS Proceedings, 1995
- Optical clarity and waveguide performance of thin film perovskites on MgOApplied Physics Letters, 1994
- Dielectric, elastic, piezoelectric, electro-optic, and elasto-optic tensors ofcrystalsPhysical Review B, 1994
- Optical Losses in Ferroelectric Oxide Thin Films: Is There Light at the End of the Tunnel?MRS Proceedings, 1994
- Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor depositionJournal of Crystal Growth, 1991