Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy
- 15 September 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 218 (2-4), 155-160
- https://doi.org/10.1016/s0022-0248(00)00583-2
Abstract
No abstract availableKeywords
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