High resolution and high electron beam sensitivity are found in poly (glycidyl methacrylate) (PGMA). PGMA resists with sensitivities in the 1×10-7 to 5×10-6 C/cm2 range and γ-values in the 1.8 to 2.7 range are easily obtained using solution polymerization and fractional precipitation. The γ-value increases with decreasing polydispersity (Mw/Mn), and γ>1.8 is obtained when Mw/Mn<1.4. A resist pattern of lines 0.2 µm wide with 0.24 µm spacings is obtained on a silicon wafers. This resist is useful for pattern fabrication of chromium, silicon dioxide, and polycrystalline silicon layers.