Deep Level Luminescence Ralated to Thermal Donors in Silicon

Abstract

We investigate the origin of the deep level luminescence from Czochralski-grown Si crystals annealed at about 450°C in relation to “thermal donors” (TD's). A sharp line appears at 0.767 eV in luminescence spectra at 4.2 K and 77 K. The appearance condition of this line coincides with that of the TD's. The intensity of the line measured at 77 K reflects the TD concentration. We conclude that the 0.767-eV line is due to a certain form of the oxygen agglomerates transformed from the oxygen complexes responsible for the TD's.