p-type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy

Abstract

p‐type ZnSe with resistivity low enough for device application has been realized by metalorganic molecular beam epitaxy. This method has enabled growth of p‐type ZnSe doped with nitrogen at concentrations as high as 10¹⁹ cm⁻³ by using ammonia as a dopant source. The dependence of photoluminescence and electrical properties on substrate temperature has been investigated. Hall measurements show p‐type conductivity with a resistivity of 0.57 Ω cm, a carrier concentration of 5.6×10¹⁷ cm⁻³, and a Hall mobility of 20 cm²/V s.