Sub-Half-Micron GaAs FETS for Applications Through K Band
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 81 (0149645X), 25-27
- https://doi.org/10.1109/mwsym.1981.1129808
Abstract
Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.Keywords
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