Circuit Conditions to Prevent Second-Subharmonic Power Extraction in Periodically Driven IMPATT Diode Networks
- 1 August 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 22 (8), 784-790
- https://doi.org/10.1109/tmtt.1974.1128336
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A Device Characterization and Circuit Design Procedure for Realizing High-Power Millimeter-Wave IMPATT-Diode AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1973
- Circuit Model for Characterizing the Nearly Linear Behavior of Avalanche Diodes in Amplifier CircuitsIEEE Transactions on Microwave Theory and Techniques, 1973
- Large-signal noise, frequency conversion, and parametric instabilities in IMPATT diode networksProceedings of the IEEE, 1972
- Subharmonic generation and the trapped-plasma mode in avalanching silicon p+-n-n+junctionsIEEE Transactions on Electron Devices, 1971
- Small-signal model with frequency-independent elements for the avalanche region of a microwave negative-resistance diodeIEEE Transactions on Electron Devices, 1970
- Effect of Harmonic and Subharmonic Signals on Avalanche-Diode Oscillator Performance (Correspondence)IEEE Transactions on Microwave Theory and Techniques, 1970
- A large signal analysis of IMPATT diodesIEEE Transactions on Electron Devices, 1968
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958