IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (12), 1963
- https://doi.org/10.1109/T-ED.1984.21829