Electrical and optical properties of tin oxide films doped with F and (Sb+F)
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3), 1615-1621
- https://doi.org/10.1063/1.330619
Abstract
This paper presents the structural, electrical, and optical properties of F‐ and (Sb+F)‐doped tin oxide films prepared by spray pyrolysis technique. Resistivity as low as 5.5×10−4 Ω cm with high optical transmission (≳80%) and high infrared reflection (∼90%) have been obtained in F‐doped tin oxide films. The figure of merit ΦTC = T10/Rsh (52.6×10−3Ω−1 at 0.65μm) of these films is the highest amongst the results reported on doped tin oxide films. The variation of mobility with doping concentration has been analyzed to understand the electron–conduction mechanism. The Drude theory has been used to explain the optical properties near the plasma edge.Keywords
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