Base resistance of I/sup 2/L structures: its determination and its influence on upward current gain
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (4), 783-786
- https://doi.org/10.1109/JSSC.1982.1051814
Abstract
A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transistor base and lateral base resistance in the n-p-n transistor. Methods for measuring the base resistance are outlined. The validity of the obtained model is demonstrated by measurement and simulation of two methods of measuring upward current gain.Keywords
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