Model for 1/f noise in metal-oxide-semiconductor transistors
- 1 March 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (3), 1594-1596
- https://doi.org/10.1063/1.329647
Abstract
At present there are two theories of 1/f noise in metal‐oxide‐semiconductor (MOS) transistors. One is based on the McWhorter model (number fluctuations), the other on the Hooge model (mobility fluctuations). In both theories the influence of high electric‐field strengths on the mobility of carriers in the channel were left out of consideration. Here a new model of 1/f noise in MOS transistors is presented which is based on the Hooge model and takes into account the high electric‐field strengths in the channnel. The theoretical results agree well with experimental results.Keywords
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