Stimulated Emission and Laser Action in Gallium Nitride
- 1 July 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (1), 5-7
- https://doi.org/10.1063/1.1653730
Abstract
Stimulated emission and laser action have been observed near 3.45 eV in single‐crystal needles of GaN. These observations support the earlier suggestion that GaN is a direct band‐gap semiconductor with Eg∼3.50 eV at 2°K. Furthermore, the occurrence of very high gain (g∼105 cm−1) in the stimulated emission emphasizes the possible device potential of this material.Keywords
This publication has 5 references indexed in Scilit:
- DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALSApplied Physics Letters, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- Absorption, Reflectance, and Luminescence of GaN Single CrystalsPhysical Review B, 1971
- Optical studies of the phonons and electrons in gallium nitrideSolid State Communications, 1970
- Optically Pumped Thin-Platelet Semiconductor LasersJournal of Applied Physics, 1968