Absorption, Reflectance, and Luminescence of GaN Single Crystals
- 15 January 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 3 (2), 497-500
- https://doi.org/10.1103/physrevb.3.497
Abstract
Analysis of the low-temperature absorption, reflectance, and emission spectra of oriented single crystals of hexagonal GaN demonstrates that the features found at 3.62 eV () and 3.72 eV () are due to the formation of free excitons associated with a direct energy gap. A close analogy exists between these results and similar data from ZnO, consistent with the relative position of Zn and Ga, and O and N atoms in the Periodic Table. Luminescence spectra present good, although not conclusive, evidence for the hypothesis that this direct gap is also the fundamental energy gap in GaN.
Keywords
This publication has 11 references indexed in Scilit:
- Optical studies of the phonons and electrons in gallium nitrideSolid State Communications, 1970
- Optical Absorption and Vacuum-Ultraviolet Reflectance of GaN Thin FilmsPhysical Review Letters, 1970
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Transmission Spectra of ZnO Single CrystalsPhysical Review Letters, 1968
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Fine structure in the optical absorption edge of anisotropic crystalsJournal of Physics and Chemistry of Solids, 1960
- The exciton spectrum of zinc oxideJournal of Physics and Chemistry of Solids, 1960