Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires
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- 2 March 2009
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (4), 1506-1510
- https://doi.org/10.1021/nl803524s
Abstract
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor−liquid−solid growth, which exploits the theoretical result that nanowires of small diameter (∼10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.Keywords
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