A well-behaved field effect transistor based on an intrinsic molecular semiconductor
- 8 April 1988
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 145 (4), 343-346
- https://doi.org/10.1016/0009-2614(88)80018-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The first field effect transistor based on an intrinsic molecular semiconductorChemical Physics Letters, 1987
- Bipolar junction formation in the case of molecular materialsJournal of Applied Physics, 1987
- A new series of molecular semiconductors: phthalocyanine radicalsJournal of the American Chemical Society, 1987
- Field-effect transistor with polythiophene thin filmSynthetic Metals, 1987
- Lutetium bisphthalocyanine: the first molecular semiconductor. Conduction properties of thin films of p- and n-doped materialsChemical Physics Letters, 1987
- Electrical and magnetic properties of thin films and single crystals of bis(phthalocyaninato)lutetiumChemical Physics Letters, 1985
- Thin film transistors for large area electronicsJournal of Vacuum Science & Technology B, 1984
- Photoconductive polymersPublished by Walter de Gruyter GmbH ,1977
- An amorphous silicon thin film transistor: Theory and experimentSolid-State Electronics, 1976