HOT ELECTRON RELAXATION TIMES IN TWO-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORS
- 15 December 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (12), 386-388
- https://doi.org/10.1063/1.1728223
Abstract
The momentum and energy relaxation times of a two‐valley semiconductor are calculated as functions of the electron temperatures in different valleys. From the expression for the small signal microwave current under hot electron conditions, the upper frequency limit of the bulk‐microwave devices is estimated.Keywords
This publication has 3 references indexed in Scilit:
- Upper frequency limit for Gunn oscillators imposed by carrier energy-relaxation timeElectronics Letters, 1966
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961