Multiple-trapping dispersive transport at high temperatures

Abstract

We discuss the results of a computer simulation of dispersive transport from an exponential distribution of traps in the high‐temperature regime in which kT is of the order of the width of the trapping levels. We find that the mobility still decreases with time, although the relationship is not so simple as at low temperatures. The results are applied to a‐Si:H alloys. We conclude that the mobility of electrons beyond the conduction band mobility edge is larger than 10 cm²/V s in these alloys.