Monolithic 1×4 Array of Uniform Radiance AlGaAs–GaAs LED's Grown by Molecular Beam Epitaxy

Abstract

Extremely uniform radiance AlGaAs–GaAs LED array was prepared by molecular beam epitaxy. About 80% of the 1170 diodes tested in a wafer had a light intensity variation of less than ±6%. Monolithic 1×4 LED array chip was coupled to a 1×4 fiber array arranged on a V-grooved Si substrate. The variation among light outputs of four fiber ends was as small as ±3%.