Growth of high quality GaAs layers on Si substrates by MOCVD
- 30 September 1986
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 77 (1-3), 490-497
- https://doi.org/10.1016/0022-0248(86)90342-8
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuitsApplied Physics Letters, 1985
- Molecular beam epitaxial growth of GaAs on Si(211)Journal of Applied Physics, 1985
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxyIEEE Electron Device Letters, 1985
- Optical properties of GaAs on (100) Si using molecular beam epitaxyApplied Physics Letters, 1984
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Molecular beam epitaxy of GaAs and AlGaAs on SiApplied Physics Letters, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984