The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl- 4,4′-diamine interfaces
- 28 July 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (4)
- https://doi.org/10.1063/1.2965120
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Highly efficient and stable inverted bottom-emission organic light emitting devicesApplied Physics Letters, 2006
- Highly efficient white organic electroluminescent devices based on tandem architectureApplied Physics Letters, 2005
- Enhanced performance of organic light emitting device by insertion of conducting/insulating WO3 anodic buffer layerSynthetic Metals, 2005
- Organic light-emitting diodes with a nanostructured TiO2 layer at the interface between ITO and NPB layersDisplays, 2003
- Improved performance and stability of organic light-emitting devices with silicon oxy-nitride buffer layerApplied Physics Letters, 2003
- Improved band alignment for hole injection by an interfacial layer in organic light emitting devicesApplied Physics Letters, 2000
- Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layersApplied Physics Letters, 1999
- Metal oxides as a hole-injecting layer for an organic electroluminescent deviceJournal of Physics D: Applied Physics, 1996
- Organic electroluminescent devices with improved stabilityApplied Physics Letters, 1996
- Organic electroluminescent diodesApplied Physics Letters, 1987