Phonons at interfaces: I. A microscopic approach
- 1 March 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (3), 138-145
- https://doi.org/10.1088/0268-1242/4/3/002
Abstract
The authors present a full three-dimensional microscopic approach to the scattering of phonons at interfaces using a valence force field model and a dynamical matrix calculation of the interface region. Phonon scattering rates for transmission and reflection are shown to differ markedly from continuum models near the band edges and in the optic branches. Localised interface states are seen for certain material combinations and a simple explanation for their appearance is given. There are no localised modes in the model at the perfect GaAs/AlAs interface.Keywords
This publication has 19 references indexed in Scilit:
- Resonance effect in inter-sub-band transitions of single quantum wellsSemiconductor Science and Technology, 1987
- Simple excitations in N-layered superlatticesSolid State Communications, 1987
- New approach to the problem of lattice dynamics of modulated structures: Application to superlatticesPhysical Review B, 1987
- Calculated superlattice and interface phonons of InAs/GaSb superlatticesPhysical Review B, 1986
- A new method to calculate phonons in superlatticesSolid State Communications, 1986
- Acoustic phonon transmission in superlatticesJournal of Physics C: Solid State Physics, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- Effects of optical absorption on the main resonance in light scattering by acoustic modes in superlatticesJournal of Physics C: Solid State Physics, 1984
- Theory of surface phonons in superlatticesPhysical Review B, 1984
- Observation of Folded Acoustic Phonons in a Semiconductor SuperlatticePhysical Review Letters, 1980