Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions
- 1 January 1974
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 121 (11), 1516-1523
- https://doi.org/10.1149/1.2401722