Impurity Absorption in GaP Doped with Copper and Oxygen
- 1 July 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 46 (1), 299-309
- https://doi.org/10.1002/pssb.2220460128
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Electrical and Optical Properties of High-Resistivity Gallium PhosphidePhysical Review B, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Some properties of copper-doped gallium phosphideJournal of Physics and Chemistry of Solids, 1962