Light-induced bias stress reversal in polyfluorene thin-film transistors
- 1 July 2003
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (1), 471-479
- https://doi.org/10.1063/1.1581352
Abstract
Gate bias-stress effects in the high-performance semiconducting polymer poly-9,9′ dioctyl-fluorene-co-bithiophene (F8T2) were studied. The bias stress in F8T2 was characterized in devices having various gate dielectric materials—different types of and a polymer—and a variety of chemically modified dielectric/semiconductor interfaces. A bias-stress effect was reversed by illuminating the transistor structure with band gap radiation. The recovery rate was directly related to the absorption characteristics of F8T2. We conclude that bias stress in F8T2 is due to hole charge trapping inside the polymer, close to the dielectric interface and not to a structural change in the polymer, or to charge in the dielectric.
Keywords
This publication has 30 references indexed in Scilit:
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003
- Carrier transport and density of state distributions in pentacene transistorsPhysical Review B, 2002
- Amorphous silicon thin-film transistors and arrays fabricated by jet printingApplied Physics Letters, 2002
- Plastic transistors in active-matrix displaysNature, 2001
- Improving efficiency by balancing carrier transport in poly(9,9-dioctylfluorene) light-emitting diodes using tetraphenylporphyrin as a hole-trapping, emissive dopantApplied Physics Letters, 2001
- Relaxation of excitons and charge carriers in polymersIEEE Transactions on Dielectrics and Electrical Insulation, 2001
- Electrical Instabilities and 1/f Noise in Organic Pentacene Thin Film TransistorsMRS Proceedings, 2000
- Organic field-effect transistors and all-polymer integrated circuitsOptical Materials, 1999
- Gate voltage dependent mobility of oligothiophene field-effect transistorsJournal of Applied Physics, 1999
- Structure and reactivity of alkylsiloxane monolayers formed by reaction of alkyltrichlorosilanes on silicon substratesLangmuir, 1989