Degradation-induced microwave oscillations in double-heterostructure injection lasers
- 1 April 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (7), 324-327
- https://doi.org/10.1063/1.1655202
Abstract
Microwave oscillations in the light output of mesa-stripe GaAsSingle Bond signGa 1-xAl xAs double-heterostructure lasers have been observed after degradation. The same lasers showed no oscillations before degradation. The experimental evidence indicates that the oscillations are caused by repetitive Q switching, with dark-line regions in the degraded units acting as saturable absorbers. © 1974 American Institute of Physics.link_to_subscribed_fulltexKeywords
This publication has 11 references indexed in Scilit:
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973
- Degradation of CW GaAs double-heterojunction lasers at 300 KProceedings of the IEEE, 1973
- A limitation on repetition rate of pulsations of junction lasers due to the repetitively Q-switched mechanismIEEE Journal of Quantum Electronics, 1973
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972
- OPTICAL SELF-PULSING OF JUNCTION LASERS OPERATING CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1971
- RepetitivelyQ-switched light pulses from GaAs injection lasers with tandem double-section stripe geometryIEEE Journal of Quantum Electronics, 1970
- Coupled Longitudinal Mode Pulsing in Semiconductor LasersPhysical Review Letters, 1969