Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- 28 May 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (6B), L777
- https://doi.org/10.1143/jjap.43.l777
Abstract
An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to V GS = +4 V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation.Keywords
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