Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
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- 6 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (14), 2952-2954
- https://doi.org/10.1063/1.1616648
Abstract
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructurefield-effect transistors(HFETs) on the inner current transport at the heterointerfaces. The analysis on transient currents for the air-exposed and H 2 -plasma-treated devices showed that N-vacancy-related near-surface traps play an important role in current collapse in AlGaN/GaN HFETs. An Al 2 O 3 -based surface passivation scheme including an N 2 -plasma surface treatment was proposed and applied to an insulated-gate HFET. A large conduction-band offset of 2.1 eV was achieved at the Al 2 O 3 / Al 0.3 Ga 0.7 N interface. No current collapse was observed in the fabricated Al 2 O 3 insulated-gate HFETs under both drain stress and gate stress.Keywords
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