Cryostat for Irradiating at 4.2°K
- 1 August 1961
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 32 (8), 922-924
- https://doi.org/10.1063/1.1717562
Abstract
A cryostat for irradiating at 4.2°K is described. In this device, it is possible to irradiate samples with no intervening foils, to measure at 4.2°K, to study annealing in situ to over 100°K, and to achieve recovery beyond 350°K. A sample holder utilizing the high thermal conductivity of copper and sapphire is discussed.Keywords
This publication has 2 references indexed in Scilit:
- Thermally Activated Point Defect Migration in CopperPhysical Review B, 1960
- Stored Energy Release in Copper Following Electron Irradiation below 20°KPhysical Review B, 1959