Analytical and experimental methods for zero-temperature-coefficient biasing of MOS transistors

Abstract

Analytical and experimental results are presented which yield new design insights for VLSI CMOS circuits to be operated over wide temperature ranges (25–25O°C). The significant influence of the body voltage on the zero-temperature-coefficient (ZTQ drain current characteristics of MOSFETs is reported and modelled. Our results suggest that state-of-theart VLSI CMOS technologies can be used to design on-chip voltage and current references and therefore a wide class of signal processing IC functions, which are stable over wider temperature ranges than have been achieved to date.