The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization

Abstract

An explanation is presented for the (100) texture and orientation observed in Si graphoepitaxy by laser and strip heater recrystallization. With radiational heating, solid crystalline ribbons and islands, having a predominance of (100) texture, can coexist with molten Si. Crystallites with (100) texture and parallel to the axis of a surface‐relief grating are preferentially retained in partially molten regions, and these crystallites seed subsequent solidification, yielding the overall orientation.