Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy

Abstract

The reported experimental results demonstrate the influence of the substrate-induced strain on the In incorporation coefficient in the growth of AlInAs by molecular beam epitaxy. AlInAs has either been grown lattice matched to InP or with a 2.3% lattice mismatch with GaAs. The In incorporation coefficient has been determined through reflection high-energy electron diffraction intensity oscillations. The strain effect on the In incorporation coefficient is supported by a thermodynamic analysis applied to the more simple but similar case of strained InAs growth.