Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A), L2213
- https://doi.org/10.1143/jjap.27.l2213
Abstract
In this study, a clean silicon surface is oxidized in a UHV chamber and the surface suboxide compositions are analyzed using in situ X-ray photoelectron spectroscopy. It is found that the predominant suboxides are Si2O3 and SiO irrespective of crystallographic orientations in the early stages of oxidation. This is interpreted in terms of a significant number of atomic steps existing on the clean Si surface. The observed chemical shift of O(1s) core level signal is explained by the partial charge transfer from the first and second nearest-neighbor silicon atoms to oxygen.Keywords
This publication has 9 references indexed in Scilit:
- Si→transformation: Interfacial structure and mechanismPhysical Review Letters, 1987
- Chemical structure of ultrathin thermally grown oxides on a Si(100)-wafer using core level photoemissionSurface Science, 1987
- The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interfaceJournal of Applied Physics, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Oxidation of the Si(111) (7×7) surface: Electron energy loss spectroscopy, low-energy electron diffraction, and Auger electron spectroscopy studiesThe Journal of Chemical Physics, 1985
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- Si-SiO2 interface structures on Si(100), (111), and (110) surfacesApplied Physics Letters, 1983
- SiSiO2 interface characterization by ESCASurface Science, 1979