Chemical beam epitaxial growth of high-purity GaAs using triethylgallium and arsine
- 5 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14), 1109-1111
- https://doi.org/10.1063/1.98755
Abstract
The growth of high-purity GaAs by chemical beam epitaxy using triethylgallium and arsine is reported. Purity of the epilayer is affected by the cracking efficiency of arsine, V/III ratio, and the substrate temperature. Samples generally show p-type conductivity with carbon as the residual impurity. The growth conditions to achieve net carrier concentration below 1014 cm−3 are identified. The low-temperature photoluminescence spectrum shows well-resolved excitonic structures, an indication of excellent optical quality.Keywords
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