MULTILAYER THIN-FILM ANALYSIS BY ION BACKSCATTERING
- 1 March 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (5), 191-194
- https://doi.org/10.1063/1.1653620
Abstract
Multilayer polycrystalline Er, Sc, or V layers, 500–20 000 Å thick, on Kovar or sapphire substrates were studied using 2‐MeV He+ ion backscattering. Underlying, as well as surface layer, average thicknesses were measured with a sensitivity of 200 Å. In addition, results were obtained on interfacial diffusion, film thickness variations, and the depth distribution of heavy impurities.Keywords
This publication has 8 references indexed in Scilit:
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- Energy-Straggling Measurements of Heavy Charged Particles in Thick AbsorbersPhysical Review B, 1970
- ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTSApplied Physics Letters, 1970
- Alpha-Particle Stopping Cross Section in Solids from 400 keV to 2 MeVPhysical Review B, 1969
- Chemical analysis of surfaces using alpha particlesJournal of Geophysical Research, 1965
- Range of Heavy Ions in SolidsPhysical Review B, 1962
- Surface analysis by charged particle spectroscopyNuclear Instruments and Methods, 1959