Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes

Abstract

High-quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz1/2noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.