High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy
- 15 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2), 121-123
- https://doi.org/10.1063/1.95706
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- One watt CW visible single-quantum-well lasersElectronics Letters, 1983
- Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guideApplied Physics Letters, 1979
- Resonant modes of GaAs junction lasersIEEE Journal of Quantum Electronics, 1969