Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- 1 May 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (5A), L727
- https://doi.org/10.1143/jjap.29.l727
Abstract
ZnS was grown on GaAs (001) substrates by a metalorganic molecular beam epitaxy (MOMBE) technique, using sequential dimethylzinc (DMZ) and hydrogen sulfide (H2S) reactant gas exposures, where these gases were supplied to the substrates after cracking at 950 and 1080°C, respectively. The results show that at a given temperature between 250 and 310°C, the growth rate was observed to be determined by the number of growth cycles, which is typical of atomic layer epitaxy (ALE). In spite of very large lattice mismatch (4.4%) between ZnS and GaAs, ZnS layers grown in an ALE mode showed good surface morphology and exhibited strong near-band-edge photoluminescence.Keywords
This publication has 6 references indexed in Scilit:
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlatticesJournal of Applied Physics, 1989
- ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs SurfaceJapanese Journal of Applied Physics, 1988
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985