Short-channel polysilicon-gate m.o.s.f.e.t.s fabricated by c.w. argon laser annealing of arsenic-implanted source and drain
- 1 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (12), 477-478
- https://doi.org/10.1049/el:19800335