Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
- 28 February 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (2), 299-308
- https://doi.org/10.1016/0038-1101(90)90170-j
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- P-type PtSi Schottky-diode barrier height determined from I–V measurementSolid-State Electronics, 1989
- Optimization of the cavity for silicide Schottky infrared detectorsSolid-State Electronics, 1989
- The optimization of the optical cavity of infrared Schottky-barrier detectorsSolid-State Electronics, 1987
- On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriersSolid-State Electronics, 1986
- Anomalies in Schottky diode I−V characteristicsSolid-State Electronics, 1986
- Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfacesApplied Physics Letters, 1985
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Range-energy relation of hot electrons in goldSolid-State Electronics, 1964
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931