Preparation of Sn-doped In2O3 (ITO) films at low deposition temperatures by ion-beam sputtering
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 515-517
- https://doi.org/10.1063/1.90847
Abstract
High‐quality films of Sn‐doped In2O3 (ITO) have been prepared by ion‐beam sputtering at deposition temperatures below 100 °C. As in the case of rf‐sputtered films, the electrical and optical properties of these films depend strongly on the O2 partial pressure during deposition. As‐deposited films with low electrical resistivity (∼5.5×10−4 Ω cm), high visible transmission (≳80%), and high infrared reflectivity at 10 μm (∼84%) have been obtained at O2 pressures of (2–3) ×10−5 Torr by deposition on both glass and Mylar substrates.Keywords
This publication has 10 references indexed in Scilit:
- Effect of O2 pressure during deposition on properties of rf-sputtered Sn-doped In2O3 filmsApplied Physics Letters, 1977
- X-ray photoemission spectroscopy studies of Sn-doped indium-oxide filmsJournal of Applied Physics, 1977
- n-indium tin oxide/p-indium phosphide solar cellsApplied Physics Letters, 1977
- Temperature dependence of the 106-μm reflectivity of ITO-coated siliconApplied Optics, 1977
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- Thin-film conducting microgrids as transparent heat mirrorsApplied Physics Letters, 1976
- Transparent heat mirrors for solar-energy applicationsApplied Optics, 1976
- Properties of Sn‐Doped In2 O 3 Films Prepared by RF SputteringJournal of the Electrochemical Society, 1975
- Indium tin oxide-coated silicon as a selective absorberApplied Optics, 1975
- Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y]Journal of the Electrochemical Society, 1972