THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMIT
- 15 August 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (4), 117-120
- https://doi.org/10.1063/1.1652535
Abstract
Data are presented showing that lightly doped or relatively pure GaAs lases basically by a band‐to‐band recombination transition at a photon energy at threshold of 1.495 eV ≈ Eg − 0.015 eV (∼77°K). The ∼0.015‐eV energy reduction from bandgap, which is greater than the exciton binding energy of 0.0034 eV (∼77°K) and unlike the exciton energy is dependent upon carrier concentration, occurs because of many‐body, electron‐hole‐lattice (EHL) interactions.Keywords
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