Carrier-activated light modulation
- 18 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3), 180-181
- https://doi.org/10.1063/1.100167
Abstract
A variety of superlattices is predicted to exhibit high-speed carrier-activated light modulation. The proposal is based on the large, tunable, and very narrow absorption peak for transitions between the two lowest conduction subbands. The theory, which is demonstrated to be predictive, also suggests correspondingly large variations of the refractive index.Keywords
This publication has 8 references indexed in Scilit:
- f-sum rule and effective masses in superlatticesPhysical Review Letters, 1987
- Novel infrared band-aligned superlattice laserApplied Physics Letters, 1987
- Digital optical switchApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- InGaAsP/InP optical switches using carrier induced refractive index changeApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Integrated electro-optic Bragg processors for digital real-time signal processingOptics Letters, 1985
- Spatial separation of carriers in InAs–GaSb superlatticesJournal of Vacuum Science and Technology, 1981