ZnSe epilayers have been grown on (100) GaAs substrates under various growth conditions in a systematic investigation of the relationships between growth parameters and film properties. Samples were grown under conditions corresponding to a 4 x 4 matrix in substrate temperature (Ts), Zn-to-Se beam pressure-ratio (BPR) space, with Ts = 250, 300, 350, and 400°C, and with BPR = 1/4:1, 1/2:1, 1:1, and 2:1. Measured film prOperties include donor and acceptor concentrations, carrier concentration and mobility, and the amplitude and width of donor-bound exciton (DBE) photoluminescence peaks. Under proper growth conditions we have been able to achieve room temperature carrier concentrations as low as 5.6 x 10 cm-3 , and peak mobilities of 7200 cm2 /V-sec. Low temperature photoluminescence spectra are dominated by the donor-bound exciton peak, at at 2.795eV; the amplitude of this peak is 2 to 3 orders of magnitude higher than the deep level emission in highly conductive films.