Low threshold 1.5 μm quantum well lasers grown by atmospheric pressure MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP)

Abstract

TBA and TBP are liquid organometallic sources that are a safer alternative to arsine and phosphine. Using TBA and TBP, we have successfully grown lattice matched In0.53Ga0.47As/InP single quantum well lasers emitting at 1.5 μm with a threshold current density of 220 A/cm2 for broad area devices 3.5 mm in length.